| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753078 | Solid-State Electronics | 2011 | 6 Pages |
Abstract
⺠HfSiO dielectric/TiN metal gate and rotated layout in MuGFET devices for analog application. ⺠Thinner TiN metal gate achieve a larger intrinsic voltage gain. ⺠HfSiON dielectric presented reduced Early voltage resulting in degraded analog behavior. ⺠MuGFET devices with rotated layout showed larger mobility and smaller Early voltage.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
M. Rodrigues, M. Galeti, J.A. Martino, N. Collaert, E. Simoen, C. Claeys,