| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753084 | Solid-State Electronics | 2011 | 4 Pages |
Strained SiGe quantum well p-MOSFETs with LaLuO3 higher-k dielectric were fabricated and characterized. The strained Si/strained Si0.5Ge0.5/strained SOI heterostructure transistors showed good output and transfer characteristics with an Ion/Ioff ratio of 105. The extracted hole mobility shows an enhancement of about 2.5 times over Si universal hole mobility and no degradation compared to HfO2 or even SiO2 gate dielectric devices.
► We fabricate compressively strained Si0.5Ge0.5 quantum well p-MOSFETs. ► LaLuO3 with k ∼ 30 is successfully integrated in the device as gate dielectric. ► The hole mobility is about 2.5 times higher than the Si universal hole mobility. ► Devices with LaLuO3 and HfO2 show similar hole mobilities. ► The hole mobility degradation with high-k is much less than electrons.
