| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753198 | Solid-State Electronics | 2010 | 9 Pages |
Abstract
We propose a unified model for large signal and small signal non-quasi-static analysis of long channel symmetric double gate MOSFET. The model is physics based and relies only on the very basic approximation needed for a charge-based model. It is based on the EKV formalism [Enz C, Vittoz EA. Charge based MOS transistor modeling. Wiley; 2006] and is valid in all regions of operation and thus suitable for RF circuit design. Proposed model is verified with professional numerical device simulator and excellent agreement is found.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Sudipta Sarkar, Ananda S. Roy, Santanu Mahapatra,