| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753201 | Solid-State Electronics | 2010 | 6 Pages |
Abstract
In this study, several n-type electrode patterns were designed to evaluate the current spreading effects in high power ThinGaN light emitting diodes. A proposed three dimensional numerical simulation was used to investigate the current spreading distributions. The experimental current spreading tendencies in various n-type electrodes were consistent with the simulation results. The maximum lighting output power was enhanced to 11% in our electrode pattern designs. The current–voltage and luminance–current performance of LED chips can apparently be improved with a better current spreading distribution. Therefore, this three dimensional simulation method could be used for the advanced analysis and optimization of LED performance.
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Authors
S.H. Tu, J.C. Chen, F.S. Hwu, G.J. Sheu, F.L. Lin, S.Y. Kuo, J.Y. Chang, C.C. Lee,