| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753204 | Solid-State Electronics | 2010 | 6 Pages |
Abstract
The threshold voltage of HfO2/AlGaN/GaN MOSHFETs was dependent on the time after the bias stress and the transconductance decreased at large gate voltages. These behaviors were explained based on the two-dimensional device simulation assuming three trap levels of EC − ET = 0.4, 0.765, 1.65 eV with short, medium and long time constants at the HfO2/AlGaN interface, which were obtained based on the analytical consideration of the experimental results.
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Authors
Y. Hayashi, S. Kishimoto, T. Mizutani,