| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753209 | Solid-State Electronics | 2010 | 6 Pages |
Abstract
An analysis of the magnetic field sensitivity that could be achieved in a sensor utilizing spin-dependent recombination (SDR) in silicon diodes is presented. Based on current theories of spin-dependent recombination and shot noise in diodes it is predicted that conventional silicon diodes may be used as detectors in a resonant magnetic field sensors with better than 3 μT resolution in a 1 Hz bandwidth – adequate for applications such as compassing, current sensing, position sensors and non-contact switches. A semiconductor device optimized for maximum SDR response will theoretically achieve a resolution on the order of 1 nT.
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Authors
Albrecht Jander, Pallavi Dhagat,