Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753232 | Solid-State Electronics | 2010 | 6 Pages |
Abstract
In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 μA/μm for n-type devices with As segregation at Vgs − Vt = 3 V and Vds = 1.2 V and 427 μA/μm for p-type devices with B segregation at Vgs − Vt = −2.8 V and Vds = −1.2 V. A detailed high-frequency characterization proves the high-performance of the devices with cut-off frequencies fT of 117 GHz for n-type and 63 GHz for p-type Schottky barrier MOSFETs and clearly elucidates the effects of extrinsic and intrinsic device parameters as a function of the gate length.
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Electrical and Electronic Engineering
Authors
C. Urban, M. Emam, C. Sandow, Q.T. Zhao, A. Fox, S. Mantl, J.-P. Raskin,