Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753233 | Solid-State Electronics | 2010 | 7 Pages |
Abstract
This work presents an experimental study in order to evaluate the quality of transport in the most advanced state-of-the-art gate-all-around devices in term of performances. Experiments have been done on silicon channel devices with metal/high-k gate all-round stack at aggressive dimensions (L × W × TSi = 25nm × 20 nm × 10nm). We deeply investigated the mobility and the limiting velocity in order to evaluate the possible occurrence of ballisticity. Interest of the gate-all-around in terms of effective current and parasitic capacitance has then been studied in the scope of elementary circuit perspectives.
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Authors
J.L. Huguenin, G. Bidal, S. Denorme, D. Fleury, N. Loubet, A. Pouydebasque, P. Perreau, F. Leverd, S. Barnola, R. Beneyton, B. Orlando, P. Gouraud, T. Salvetat, L. Clement, S. Monfray, G. Ghibaudo, F. Boeuf, T. Skotnicki,