| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753248 | Solid-State Electronics | 2010 | 6 Pages |
Abstract
A novel DRAM cell based on floating junction gate (FJG) concept is investigated for its extended applications. Compared to the two-transistor floating gate DRAM cell, the new memory cell investigated in the present work has a much simpler configuration with only one transistor. Besides, its write speed is improved by introducing an integrated gated-diode so that state “1” can be self-refreshable. In this paper, the device configuration, the DRAM application feasibility, the self-refreshing ability, and the non-destructive read are explored. In addition, extended applications of the DRAM cell using the FJG concept will be discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Peng-Fei Wang, Lei Liu, Dongping Wu, Song-Gan Zang, Wei Liu, Yi Gong, David Wei Zhang, Shi-Li Zhang,