Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753334 | Solid-State Electronics | 2009 | 7 Pages |
Abstract
Vertical and horizontal scaling is aggressively used to increase frequency performances of SiGe Heterojunction Bipolar Transistors. As a result, the evaluation of the extrinsic electrostatic capacitances becomes increasingly important. In this article, we investigate the electrostatic parasitic capacitance in 230-335Â GHz SiGe transistor technologies. We compare measured electrostatic capacitances with calculations based on a finite elements modelling. We conclude that the influence of the parasitic capacitances only screens the intrinsic performances of the devices by 10-14% but an accurate estimation of theses parasitics must be included in the design of next generation SiGe HBT.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Nicolas Zerounian, Frédéric Aniel, Benoît Barbalat, Pascal Chevalier, Alain Chantre,