Article ID Journal Published Year Pages File Type
753334 Solid-State Electronics 2009 7 Pages PDF
Abstract
Vertical and horizontal scaling is aggressively used to increase frequency performances of SiGe Heterojunction Bipolar Transistors. As a result, the evaluation of the extrinsic electrostatic capacitances becomes increasingly important. In this article, we investigate the electrostatic parasitic capacitance in 230-335 GHz SiGe transistor technologies. We compare measured electrostatic capacitances with calculations based on a finite elements modelling. We conclude that the influence of the parasitic capacitances only screens the intrinsic performances of the devices by 10-14% but an accurate estimation of theses parasitics must be included in the design of next generation SiGe HBT.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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