Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753417 | Solid-State Electronics | 2008 | 5 Pages |
Abstract
A time-dependent technique is developed for carrier recombination-generation (R-G) lifetimes measurement in the silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET). One gate is kept in strong accumulation, and the other gate is kept in strong inversion. A ramp voltage is applied to the accumulated gate, and the drain current transients are monitored for both carrier R-G lifetimes extraction. The time-dependent technique shows an extensive applicability, and its credibility is proved by simulation.
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Authors
Gang Zhang, Won Jong Yoo, Chung Ho Ling,