| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753440 | Solid-State Electronics | 2008 | 4 Pages |
Abstract
The design of a four-valued multiplexer using the negative differential resistance (NDR) circuit is demonstrated. The NDR circuit used in this work is made of the Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and the SiGe-based heterojunction bipolar transistor (HBT). However we can obtain the NDR characteristic in its combined I-V curve by suitably arranging the MOS parameters. This novel multiplexer is made of MOS-HBT-NDR-based decoders and inverters. The fabrication is based on the standard 0.35 μm SiGe BiCMOS process.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Kwang-Jow Gan, Dong-Shong Liang, Cher-Shiung Tsai, Chun-Ming Wen, Yaw-Hwang Chen,