Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753469 | Solid-State Electronics | 2007 | 7 Pages |
Abstract
The influence of the dimensionality on the performance of tunneling field-effect transistors is investigated with simulations. It is shown that in a three-dimensional tunneling FET it is possible to achieve inverse subthreshold slopes smaller than 60 mV/dec. However, there is a trade-off between high on-currents and small values for the subthreshold swing. Using a carbon nanotube tunneling FET as an example it is shown that in contrast to the 3D case, one-dimensional systems offer the possibility to combine a high on-state performance with steep inverse subthreshold slopes.
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Authors
J. Knoch, S. Mantl, J. Appenzeller,