Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753474 | Solid-State Electronics | 2007 | 7 Pages |
Abstract
A time-dependent simulation procedure has been implemented in a state of the art Monte-Carlo device simulator that includes quantum corrections, and applied to the evaluation of the RF performance of bulk and ultra-thin-body double-gate (UTB-DG) MOSFETs with LGÂ =Â 25Â nm. The analysis focuses on the evaluation of the signal delay along the channel and of the admittance matrix at the device terminals. The performance of the bulk and UTB-DG MOSFETs are compared; the latter provides a significantly larger transition frequency (FT), due to the larger trans-conductance and much lower total drain capacitance, thanks to suppressed junction capacitance.
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Electrical and Electronic Engineering
Authors
N. Barin, P. Palestri, C. Fiegna,