Article ID Journal Published Year Pages File Type
753476 Solid-State Electronics 2007 5 Pages PDF
Abstract

Electrical properties of metal oxide semiconductor (MOS) capacitors with gate stacks of epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) are studied. The influence of CMOS compatible rapid thermal annealing on these gate stacks is examined. Finally, n- and p-type MOS-field effect transistors (MOSFETs) on silicon on insulator (SOI) material with epitaxial Gd2O3 and TiN gate electrodes are presented.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes
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