Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753486 | Solid-State Electronics | 2007 | 5 Pages |
Abstract
Uniaxial strain on wafer-level was realised by mechanically bending and direct wafer bonding of Si wafers in the bent state followed by thinning one of the Si wafers by the smart-cut process. This approach is flexible and allows to obtain different strain values at wafer-level in both tension and compression. UV micro-Raman spectroscopy was used to determine the strain in the thin transferred Si layers. Numerical modelling by 3D finite elements of the strain provided a good description of the experimental results.
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Authors
C. Himcinschi, I. Radu, F. Muster, R. Singh, M. Reiche, M. Petzold, U. Gösele, S.H. Christiansen,