| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753517 | Solid-State Electronics | 2007 | 7 Pages |
We report the characteristics of InGaAs-oxide implemented by using a liquid phase oxidation and an oxygen plasma treatment and its application to depletion-mode In0.53Ga0.47As-channel metal oxide field effect transistor (MOSFET). The InGaAs-oxide characterized by using X-ray photoelectron spectroscopy (XPS), capacitance–voltage measurements showed excellent oxide/semiconductor interface characteristics. Depletion-mode (1.5 × 50 μm2) In0.53Ga0.47As-channel MOSFET fabricated by using a conventional optical lithography showed a complete pinch-off and saturation characteristics. The fT and fmax of the In0.53Ga0.47As-channel MOSFET were approximately 9 GHz and 10 GHz, respectively. The low frequency noise spectra of the In0.53Ga0.47As-channel MOSFET showed 1/f noise characteristics. The maximum differential transconductance frequency dispersion (Δgm/gm0) appeared at T = 200 K and was measured to be as low as 9.0%. The results indicate the potential of the InGaAs-oxide implemented by using the liquid phase oxidation and oxygen plasma treatment for use in high-performance InP-based MOSFET applications.
