| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753526 | Solid-State Electronics | 2007 | 4 Pages |
Abstract
Organic light-emitting devices with a hole-buffer layer (HBL) 4,4â²-N,Nâ²-dicarbazole-biphenyl (CBP) inserted between ITO anode and hole transporting layer were fabricated. The present of the CBP can balance the hole and electron injections and reduce the hole-leakage to the cathode resulting in the enhancement of the current efficiency. The highest current efficiency of the device with optimum CBP thickness of 4Â nm was 5.66Â cd/A at 8Â V that is nearly 1.5 times than that of the device without the HBL.
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Authors
Huishan Yang, Wenfa Xie, Yi Zhao, Jingying Hou, Shiyong Liu,