Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
753582 | Solid-State Electronics | 2006 | 6 Pages |
Abstract
Ultrapure p-Ge with doping concentration as low as â¼1011 cmâ3 is considered to investigate self-pulsating oscillations at the onset of impurity breakdown with respect to an S-shaped current-field characteristic. The associated nonlinear dynamics is computed within the two-impurity-level model with more convincing parameterization. The system undergoes a single Hopf bifurcation in the presence of a sufficiently large circuitry capacitance. As the operating point is controlled towards the breakdown threshold, no further bifurcations but a changeover of the periodic oscillation occurs from being sinusoidal to pulsating. Our approach also obtains agreeable results for n-GaAs with typically higher doping.
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Authors
Ching-Hong Ho, Yuo-Hsien Shiau,