| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753594 | Solid-State Electronics | 2006 | 9 Pages |
In this paper a new method for extraction of the channel length and channel resistance as a function of gate-voltage in MOSFET’s is introduced. The method is accurate and calculates the threshold voltages of all devices with different gate-lengths. The channel resistance is divided in two parts; the first part is a function of gate-voltage and threshold voltage difference (Vg − Vt) and the second part is only a function of gate-voltage. Further, the model determines the threshold voltage of short-channel devices independent of their parasitic resistances and implements the channel mobility as an arbitrary function of gate-voltage while the gate-voltage-dependent part of the resistance is uniquely separated from the first part of channel resistance for all devices.
