Article ID Journal Published Year Pages File Type
753595 Solid-State Electronics 2006 5 Pages PDF
Abstract

Classical physics drain current core models for symmetric Double Gate (DG), asymmetric DG, and bulk undoped-body MOSFET are unified using a mixed formulation of charge and surface potential. The resulting expression is a generalized description of the behavior of the silicon body.

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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current
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