| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 753624 | Solid-State Electronics | 2005 | 4 Pages |
Abstract
Two-dimensional surface electric field in the drift region of RESURF LDMOS is modeled in the off-state and on-state. Numerical results are shown to support the analytical results. Based on these results, 3-D Kirk effect is modeled. The reason inducing high electric field near the drain is demonstrated and methods to lower the high electric field are proposed.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Zhilin Sun, Weifeng Sun, Longxing Shi,