| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 755908 | Communications in Nonlinear Science and Numerical Simulation | 2011 | 9 Pages |
Probabilistic interpretation of transition from the dispersive transport regime to the quasi-Gaussian one in disordered semiconductors is given in terms of truncated Lévy distributions. Corresponding transport equations with fractional order derivatives are derived. We discuss physical causes leading to truncated waiting time distributions in the process and describe influence of truncation on carrier packet form, transient current curves and frequency dependence of conductivity. Theoretical results are in a good agreement with experimental facts.
► Transition from dispersive to quasi-Gaussian regime is statistically interpreted. ► New dispersive transport equations are obtained and solved. ► Physical origin of the phenomenon of intermediate asymptotics is revealed.
