Negative ion formation through dissociative electron attachment to the group IV tetrabromides: Carbon tetrabromide, silicon tetrabromide and germanium tetrabromide

- Dissociative electron attachment (DEA) to XBr4 (X = C, Si and Ge) from 0 to 10 eV.
- Appearance energies and product formation in DEA to XBr4 (X = C, Si, Ge) are established.
- Complementary fragments Br− and XF3− and Br2− and XF2− observed for all compounds.
- Dominating contribution through the t2 (LUMO+1) shape resonance in CBr4 and GeBr4.
- Molecular ion and Br− formation dominates through the a1 resonance (LUMO) from SiBr4.