Quantification of modifiers in advanced materials based on zinc oxide by total reflection X-ray fluorescence and inductively coupled plasma mass spectrometry

A novel approach to quantification of Ga and Zn modifiers in advanced materials based on zinc oxide is presented. The approach includes a combination of total reflection X-ray fluorescence (TXRF) and inductively coupled plasma mass spectrometry (ICP-MS) for determination and validation of the results. It is suggested to use aqueous standards for the direct determination of elements in powder samples by TXRF with a relative standard deviation no more than sr = 0.11. The accuracy of these results was proved by ICP-MS after the sample decomposition, sr(In) = 0.05, sr(Ga) = 0.06 and sr(Zn) = 0.06. It was established that there is a possibility to determine indium above 300 ppb on the background of K-M3 line of argon.