Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7674703 | Spectrochimica Acta Part B: Atomic Spectroscopy | 2014 | 8 Pages |
Abstract
Silicon wafers implanted with Arsenic at different implantation energies were measured by XRR and GIXRF using a combined, simultaneous measurement and data evaluation procedure. The data were processed using a self-developed software package (JGIXA), designed for simultaneous fitting of GIXRF and XRR data. The results were compared with depth profiles obtained by Secondary Ion Mass Spectrometry (SIMS).
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Analytical Chemistry
Authors
D. Ingerle, F. Meirer, G. Pepponi, E. Demenev, D. Giubertoni, P. Wobrauschek, C. Streli,