Rapid reagent-less on-line H2O2 quantification in alkaline semiconductor etching solution, Part 2: Nephelometry application

A rapid, reagent-less nephelometric method was developed for automatic on-line H2O2 quantification in industrial alkaline semiconductors etching solution. The method is based on the H2O2 catalytic decomposition by immobilized MnO2 resulting in oxygen gas suspension which scatters the light. Its intensity was registered vs the time applying the nephelometry and the height of the Photocurrent vs. the Time peak was used as measure of the H2O2 concentration.150