| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7696418 | Journal of Rare Earths | 2018 | 6 Pages |
Abstract
Resistivity of LaNixO3+δ films on Si substrates. Highly (110)-oriented LaNixO3+δ thin films were prepared on Si (100) substrates by the sol-gel method. It is proved that the LaNixO3+δ film has the lowest electrical resistivity when La/Ni ratio is 1:0.95. Furthermore, the electrical resistivity decreased as the annealing temperature increased from 600 to 700 °C. The electrical resistivity change of LaNixO3+δ was explained by first-principles studies.117
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Authors
Mi Xiao, Zebin Zhang, Weikang Zhang, Ping Zhang, Kuibo Lan,