| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7700614 | Organic Electronics | 2018 | 9 Pages |
Abstract
The variation in electronic properties of p-type doped and n-type doped armchair germanene nanoribbon (AGeNR) with respect to pristine AGeNR (Fig. a and b) is observed. The I-V characteristics of each p-type doped AGeNR (Ga: gallium, In: Indium, Tl: Thallium) is shown (Fig. c) which shows negative differential resistances. Indium (In) atom doped AGeNR based device with high dielectric constant hafnium dioxide (HfO2Â =Â 25) is used for formation of field effect transistor and its FET performance are analysed.352
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Authors
Sukhbir Singh, Komal Garg, Ashutosh Sareen, Ravi Mehla, Inderpreet Kaur,