Electronic and optoelectronic properties of zinc phthalocyanine single-crystal nanobelt transistors

High-performance ZnPc nanobelt transistors were achieved with mobility as high as 0.75 cm2V−1s−1 on OTS modified SiO2 dielectric, which is the highest value for the reported ZnPc devices. Based on the optimized ZnPc single-crystal field-effect transistor, its photoelectric properties were studied, showing the high photoswitching ratio at 7.34 × 103 and the high photoresponsivity at 1.57 × 104 AW−1.230