| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7701809 | Organic Electronics | 2015 | 6 Pages |
Abstract
In a single Au/P3HT(350Â nm)/Al device under different forward drive conditions, the negative MC response at high current densities displays an â¼1 order of magnitude increase after annealing above the glass transition temperature of P3HT. After 60Â min re-doping through photo-oxidization the low current density MC is obtained.
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Authors
Hang Gu, Shankui Chang, David Holford, Tingting Zhang, Haizhou Lu, Theo Kreouzis, William P. Gillin,