Fracture of anodic-bonded silicon-thin film glass-silicon triple stacks

In this study we focus on the fracture behavior of two types silicon-thin film glass-silicon (Si-Glass-Si) triple stacks specimens with a sharp corner. We determine the notch stress intensity factor Kn for both specimens using a combination of the Williams eigenfunction expansion method, Stroh’s sextic formalism, finite element analysis, and the path-independent H-integral. Empirical solutions of dimensionless stress intensity factors are proposed for two typical specimens, and the dependence of geometry is analyzed. Furthermore, the effect of glass thickness on stress intensity is explored for anodic-bonded Si-Glass-Si triple stacks. We discuss the feasibility of using a critical value of Kn to correlate the failure results for both specimens with various bond area and glass thickness.