Pre-estimation and evaluation of parameters from J–V curve of CI(G)S devices

The necessity to pre-estimate the mathematical model is discussed and the parameters extracted from the density current–voltage (J–V) curves are evaluated based on a double-exponential model. Two devices, epitaxial CIS and polycrystalline CIGS, are fabricated and compared for J–V characteristics in the dark and under illumination. After pre-estimation, the epitaxial CIS device under illumination was over-estimated, while crystalline CIGS device as well as epitaxial CIS device in the dark showed well-behaved property. Parameters (ideality factor, saturation current density, series and shunt resistance) were extracted by double-exponential model from these well-behaved J–V characteristics. Moreover, the meanings of these parameters are discussed and compared to describe physical mechanism of devices.

Research highlights► Pre-estimation of J–V for epitaxial and polycrystalline CIGS devices. ► Light epitaxial CIS device will be over-estimated by mathematical model. ► Parameters were extracted by double-exponential model for well-behaved J–V. ► Physical mechanism of extracted parameters was discussed and compared.