Article ID Journal Published Year Pages File Type
7745796 Solid State Ionics 2015 6 Pages PDF
Abstract
Layered oxide Bi4O2O11 and mixed oxides of bismuth, vanadium and a third metal (ME = Cu, Zn, Mn) were synthesized and characterized using XRD, Raman and SEM. The energy band gap (Eg) of samples determined using UV-VIS reflectance spectra equals to 2.46, 2.34, 2.27 and 2.18 eV for Bi4V2O11, BICUVOX (Bi2V1 − xCuxO5.5 − 3x/2), BIZNVOX (Bi2V1 − xZnxO5.5 − 3x/2) and BIMNVOX (Bi2V1 − xMnxO5.5 − x/2) (x = 0.1), respectively. Open circuit voltage measurements confirmed the n-type semiconductor's activity for all the tested oxides. This work shows that all studied materials are active under UV and visible light illumination.
Related Topics
Physical Sciences and Engineering Chemistry Electrochemistry
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