Structural and electrical study of samarium doped cerium oxide thin films prepared by e-beam evaporation

The ionic conductivity depends on thin films density and blocking factor. The best ionic conductivity (σg = 1.34 Sm− 1 and σgb = 2.29 Sm −1 at 873 K temperature, activation energy ΔEg = 0.91 eV and ΔEgb = 0.99 eV) was achieved for SDC thin films formed at 4 Å/s deposition rate. It was found that the highest density (5.25 g/cm3) and the lowest relaxation time in grain (τg = 9.83 × 10− 7 s), and the lowest blocking factor (0.39) is in SDC thin films formed at 4 Å/s deposition rate. The deposition rate influences the stoichiometry of the formed SDC thin ceramic films.