Article ID Journal Published Year Pages File Type
7758769 Journal of Solid State Chemistry 2015 30 Pages PDF
Abstract
Cu2SnSe3 (CTSe) semiconductor is interesting because of its adjustable electrical properties by extrinsic doping. Si and Ti doping in CTSe leads to high carrier mobility above 800 cm2 V−1 s−1.189
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Inorganic Chemistry
Preview
Structural and electrical properties of Si- and Ti-doped Cu2SnSe3 bulks
Authors
, ,