Structural characterization and low-temperature physical properties of p-type single-crystal K8Ga8.5Sn37.5 grown by self-flux method

Single-crystal K8Ga8.5Sn37.5 was synthesized via a double-flux method where Ga and Sn were used as fluxes. Large disorder for K inside the larger polyhedra in the crystal structure of K8Ga8.5Sn37.5 was observed. Measurements of the electronic properties indicate p-type conduction with the onset of minority charge carrier conduction at temperatures above 270 K.