| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7760332 | Journal of Solid State Chemistry | 2013 | 7 Pages |
Abstract
- Bi doped Mg2.16Si0.4Sn0.6 showed 15% enhancement in the power factor as compared to Sb doped samples.
- Bi doping reduced κph of Mg2.16Si0.4Sn0.6 due to stronger point defect scattering.
- The highest ZT=1.4 at 800Â K was achieved for Mg2.16(Si0.4Sn0.6)0.97Bi0.03.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Inorganic Chemistry
Authors
Wei Liu, Qiang Zhang, Kang Yin, Hang Chi, Xiaoyuan Zhou, Xinfeng Tang, Ctirad Uher,