Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7761018 | Journal of Solid State Chemistry | 2012 | 4 Pages |
Abstract
⺠First-principles study of the stability of Mg2Si-Mg2X alloys (X=Ge or Sn) and their defects. ⺠Mg2Si-Mg2Ge alloys form a complete series of solid solutions. ⺠Miscibility gap is found in Mg2Si-Mg2Sn alloys. ⺠Interstitial defects are more stable in Mg2Si and induce n-doping.
Related Topics
Physical Sciences and Engineering
Chemistry
Inorganic Chemistry
Authors
Romain Viennois, Philippe Jund, Catherine Colinet, Jean-Claude Tédenac,