Interface analysis on MOVPE grown InP–GaInAs–InP double heterostructures for application in infrared solar cells

•Evaluation of MOVPE preparation for critical interfaces in IR tandem solar cells.•Introduction of superior III-rich InGaAs to InP interface preparation route.•Analysis of layer- and interface quality by means of minority carrier lifetime.

We investigate the Ga0.47In0.53As to InP interface with respect to their charge carrier lifetimes, interface recombination velocity and lateral interface homogeneity by using a time- and spatially resolved photoluminescence technique. Different preparation routes, such as group-III- and group-V-rich variations for the upper Ga0.47In0.53As to InP interface, which is basic for optoelectronic and photovoltaic applications, are presented for a series of so-called double heterostructures with different absorber thickness. For chosen interface preparation routes the bulk lifetime and interface recombination velocity at a fixed excitation density are extracted. Overall low interface recombination velocities occur, while one group-III-rich preparation route with an enhanced lateral homogeneity results in higher lifetimes at all excitation densities compared to the sophisticated group-V-rich preparation.