Ag incorporation in low-temperature grown Cu(In,Ga)Se2 solar cells using Ag precursor layers

•Ag was incorporated in low-temperature grown CIGS films using Ag precursor layers.•Ag alloyed CIGS (ACIGS) films exhibit significant recrystallization and Na incorporation.•The extent of Ag alloying affects the device performance.•Controlled Ag alloying provides better device performance compared to devices without Ag alloying.

In this work, with Ag alloying, we attempted to improve the microstructure and device performance of low-temperature grown Cu(In,Ga)Se2 (CIGS) solar cells. Ag precursors with various thicknesses are deposited onto Mo prior to the CIGS growth step, and absorber films are formed via a single-step co-evaporation at a substrate temperature of 350 °C. The addition of Ag in low-temperature grown CIGS films induces significant recrystallization and Na incorporation. Through adjustment of the Ag content of the Ag-alloyed CIGS films, an improved device performance is obtained compared with a CIGS solar cell without Ag alloying.

Graphical abstractControlled Ag alloying of low-temperature grown CuInGaSe2 solar cells provides improved device performance compared to devices without Ag alloyingFigure optionsDownload full-size imageDownload as PowerPoint slide