| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 78134 | Solar Energy Materials and Solar Cells | 2014 | 5 Pages |
•Resistivity of single crystalline p-Cu2ZnGeSe4 is investigated between 10 and 300 K.•Variable-range hopping conduction of the Mott type is established below ~230 K.•Width and density of the localized states of the acceptor band are estimated.•Localization radii and Bohr radius of the localized carriers are obtained.
Resistivity, ρ(T), of the Cu2ZnGeSe4 single crystals is investigated between T~10 and 300 K. The Mott variable-range hopping (VRH) conductivity is observed in the temperature interval of ~80–230 K. Analysis of the Mott VRH conductivity yields the values of the semi-width of the acceptor band, W≈13–15 meV, the relative acceptor concentration, NA/Nc≈0.86–0.89, at the critical concentration of the metal–insulator transition, Nc≈6.3×1018 cm−3, the values of the localization radius, a/aB≈7–9 with the Bohr radius aB≈13.5 Å, the mean acceptor energy E0≈82 meV and the mean density of the localized states, g≈(1.7–2.1)×1017 meV−1 cm−3.
