| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 78236 | Solar Energy Materials and Solar Cells | 2013 | 7 Pages |
•We formulate inks with metallic In and Ga nanoparticles produced by purely physical methods in an alkanethiol solvent.•Inks can be safely coated in air and annealed in a Se atmosphere to form chalcopyrite thin-film solar cell.•This ink-based process avoids highly toxic solvent, gas, or etches, and could be scaled-up for the industry.•Power conversion efficiencies higher than 7% are obtained and devices are extensively characterized.
We developed a new industry-compatible ink-based process to produce efficient chalcopyrite CuIn1−xGaxSe2 thin-film solar cells. Metallic In and Ga nanoparticles were produced by purely physical methods, using a low-cost and non-explosive solvent. The solvent acts as a protection against oxidation and can be removed without leaving carbon contamination. We formulated inks that can be safely coated in air by doctor blading. The precursors were converted into a functional absorber after annealing under Se vapors in a primary vacuum. This simple two-step process led to chalcopyrite CuIn1−xGaxSe2 thin-films with strong mechanical adhesion, and power conversion efficiency higher than 7%.
