| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 78282 | Solar Energy Materials and Solar Cells | 2013 | 9 Pages |
Abstract
Cu3SbS3 is a novel chalcogenide semiconductor with p-type conductivity and an energy bandgap of 1.84 eV. By incorporating selenium into this material to form Cu3Sb(SexS1−x)3 where x=Se/(Se+S), the energy bandgap can be altered to be in the range 1.38–1.84 eV for 0 ► Fabrication of Cu3SbS3 thin films by sulfurization of metallic precursors. ► Photoactive p-type Cu3SbS3 films have an energy bandgap of 1.84 eV. ► Cu3Sb(SexS1−x)3 thin film produced by combined selenisation/sulphurisation. ► Tuneable energy bandgap from 1.84 eV to 1.38 eV for 0
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Authors
Pietro Maiello, Guillaume Zoppi, Robert W. Miles, Nicola Pearsall, Ian Forbes,