Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7832864 | Applied Surface Science | 2018 | 10 Pages |
Abstract
A novel monolayer Hf0.5Ta0.5B2-SiC-Si coating with defect-free structure for protecting graphite materials was prepared by dipping-pyrolysis combined with reactive infiltration of gaseous silicon. The phase synthesis, microstructure, oxidation and ablation resistance properties of the prepared Hf0.5Ta0.5B2-SiC-Si coating were studied. Results demonstrated that the as-prepared coating exhibited excellent low and high temperature oxidation resistance, after isothermal oxidation at 900â¯Â°C and 1500â¯Â°C for 1320â¯h and 2080â¯h, respectively, the mass gains were 0.14% and 1.74%, respectively. The excellent anti-oxidation performance at 900â¯Â°C was ascribed to the defect-free structure of coating, while the formed compound Hf-Ta-Si-O glassy oxide layer on the coating surface was responsible for the excellent oxidation resistance at 1500â¯Â°C. Moreover, the Hf0.5Ta0.5B2-SiC-Si coating had good ablation resistance, after ablation for 60â¯s, the mass and linear ablation rates of the coated sample were 1.05â¯mg/s and â10.2â¯Î¼m/s, respectively. The ablation behaviors of the coated sample mainly included thermal-physical and thermal-chemical erosion along with thermos-mechanical denudation.
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Authors
Yan Jiang, Tianyu Liu, Hongqiang Ru, Wei Wang, Cuiping Zhang, Lu Wang,