Fabrication of Schottky barrier diodes on clump of gallium nitride nanowires grown by chemical vapour deposition

In this study, Schottky barrier diodes on 'clump of nanowires' has been fabricated and its electrical behaviour on variation of distance of separation between Ohmic (Ti/Al/Ni/Au) and Schottky (Ni/Au) contacts has been studied. The variations in current under dark and bright conditions have been investigated. High quality gallium nitride nanowires were grown by chemical vapour deposition technique using gold-palladium alloy as catalyst. The novelty of this work is that, the barrier height remains unaffected irrespective of any variations in the ideality factor. Also, the method of lithography during fabrication did not give rise to any surface related inhomogeneities.