Low temperature solution-processed IGZO thin-film transistors

We reported the low-temperature high performance IGZO TFTs by solution processing. The influence of IGZO composition over broad range on thin films and devices properties were investigated by a wide range of characterization techniques. The schematic of TFT solution-processed IGZO TFTs mobility with different compositions has been obtained. In order to achieve decent TFT performance, the In content should be much high for solution-processed IGZO TFTs. The optimal solution-processed IGZO TFTs with In:Ga:Zn = 5:1:1 composition exhibited a large mobility of 9.1 cm2 V−1 s−1, low subthreshold swing of 0.22 V/decade, and high on/off ratio of 106 at 300 °C processing temperature.