Exfoliated, thin, flexible germanium heterojunction solar cell with record FF=58.1%

A thin, flexible monocrystalline germanium (c-Ge) heterojunction solar cell has been developed based on a novel kerfless exfoliation process and remote plasma-enhanced chemical vapor deposition (RPCVD) of hydrogenated amorphous silicon (a-Si:H). The performance of the exfoliated 50 μm thick and bulk 500 μm Ge heterojunction cells is compared in this paper. A superior conversion efficiency of 5.28% was achieved with the 50 μm exfoliated Ge cell versus 1.78% for the bulk Ge cell, in agreement with simulation results. A record fill factor of 58.1% for an a-Si:H/c-Ge heterojunction cell was obtained with the exfoliated cell. Moreover, the conversion efficiency achieved with the 50 μm exfoliated cell (without intrinsic a-Si:H passivation) is comparable to the best reported in literature with bulk Ge heterojunction cells and intrinsic a-S:H passivation.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► A novel kerfless exfoliation process is used to realize a thin, flexible and mechanically robust Ge foil. ► a-Si:H/c-Ge heterojunction cells on the exfoliated Ge foil and bulk 500 μm Ge substrate are fabricated using a remote plasma CVD system without i-layer. ► Exfoliated, thin Ge cell shows a superior efficiency of 5.28%, compared to 1.78% for the bulk Ge cell, in agreement with simulation results. ► A record fill-factor of 58.1% for an a-Si:H/c-Ge heterojunction cell is obtained with the exfoliated Ge cell.