Fast synthesis of high-quality large-area graphene by laser CVD

Few layer graphene (FLG) has attracted tremendous interest in recent years because of its unique properties. However, how to synthesize graphene quickly and control the layer number is an important issue. Herein, high-quality and layer-controlled graphene was obtained on polycrystalline nickel foil by laser chemical vapor deposition (LCVD) within a few minute, which is a cold-wall CVD type based on irradiation of a continuous wave laser with Super-Gaussian distribution spot. The number of graphene layers and quality was controlled by controlling the growth time, laser power and cooling rate. The growth mechanism of the FLG has also been discussed.