Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7834866 | Applied Surface Science | 2018 | 5 Pages |
Abstract
We report a photocurrent generation mechanism in the SnO2 thin film surface layer by the charged chemisorption O ions on the SnO2 thin film surface induced by O2-annealing. A critical build-in electric field in the SnO2 surface layer resulted from the charged O ions on SnO2 surface prolongs the lifetime and reduces the recombination probability of the photo-excited electron-hole pairs by UV-laser irradiation (266â¯nm) in the SnO2 surface layer, which is the key for the photocurrent generation in the SnO2 thin film surface layer. The critical lifetime of prolonged photo-excited electron-hole pair is calculated to be 8.3â¯ms.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Po-Ming Lee, Ching-Han Liao, Chia-Hua Lin, Cheng-Yi Liu,